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In preliminary findings, US ITC Chief Administrative Law Judge says Innoscience infringes GaN patent

( July 3, 2024, 10:10 GMT | Official Statement) -- MLex Summary: China’s Innoscience (Zhuhai) Technology infringes one of two patents owned by Efficient Power Conversion, and both patents are valid, US International Trade Commission Chief Administrative Law Judge Clark S. Cheney held.  US Patent Nos. 8,350,294 and 8,404,508 relate to gallium nitride (GaN) high electron mobility transistor (HEMT) semiconductors capable of switching at high frequency and carrying large currents at a lower cost than traditional silicon-based power devices. See attached document....

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